SEMICONDUCTOR PRESSURE SENSOR AND METHOD OF MANUFACTURING THE SAME

摘要

In a semiconductor pressure sensor (1), a dam (21) which prevents a sheathing resin (22) from flowing into a diaphragm portion during the molding of the sheathing resin is disposed on the outer periphery of piezoresistors and the diaphragm portion on the surface of a semiconductor pressure sensor chip. The volume of the base (4) and that of the semiconductor pressure sensor chip are adjusted so that a tensile force exerted upon the semiconductor pressure sensor chip by the base cancels a compressive force exerted upon the semiconductor pressure sensor by the sheathing resin (22) when the temperature of the semiconductor pressure sensor returns to an ordinary room temperature from a high temperature. As a result, strain is not caused in the semiconductor pressure sensor chip, and therefore measurements of pressure with a high degree of accuracy can be performed.