| 摘要 |
A TFT(thin film transistor) array structure and method thereof having double line structure are provided to prevent a short between a gate line and a data line. The method comprises the steps of: simultaneously forming a pixel electrode(5) and a gate and a data lines(5a,5b) made of same materials on a glass substrate(8); forming a gate insulating layer(9) on the gate line pattern(5b); forming an active layer(1) between the data line(5a) and the pixel electrode(5); forming a contact resistance layer(6) on the resultant structure; and forming a source and drain electrode(2,4) to contact with the data line(5a) and the pixel electrode(5), respectively. Thereby, it is possible to prevent a short between the gate line(5b) and the data line(5a).
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