| 摘要 |
<p>PURPOSE: To prevent a movable part from being fixed to a substrate in the case of etching a sacrifice layer. CONSTITUTION: Silicon oxide films 2, 3 and a silicon nitride film 4 are formed on the surface of a P type silicon substrate 1 while a movable part 5 made of a thin film is arranged above the silicon nitride film 4 at a specific interval, besides a movable gate electrode part to be displaced by acceleration is provided on a part of the movable part 5. On the other hand, fixed electrodes (source.drain parts) made of an impurity diffused layer are formed on the P type silicon substrate 1 so that the running current may be fluctuated by the fluctuation of the relative position to the movable gate electrode part by acceleration. The movable range limiting protrusions 17 are provided on the underface of the movable part 5 excluding the movable gate electrode part so as to form an interval narrower than that between the P type silicon substrate 1 1 and the movable gate electrode part. Incidentally, the ends of the movable range limiting protrusions are rounded.</p> |
