| 摘要 |
<p>PURPOSE: To prevent after image, burning and the drop of a contrast ratio owing to designations by enlarging superposition between a pixel electrode forming a gate storage and a prestage gate bus line in the area easy to cause an orient defect owing to horizontal direction electric field in a pixel periphery compared with the area except that area. CONSTITUTION: The gate storage formed between the pixel electrode 14 and the prestage gate bus line 11 is used as storage capacity. On the other hand, a thin film transistor(TFT) substrate is rubbed in the right downward direction, and a color filter(CF) substrate is rubbed in the left upward direction. A superposition amount (a) of the pixel electrode onto the gate bus line 11 in the vicinity of left upward corner of the pixel electrode 14 opposite to the rubbing direction of the TFT substrate side is made larger than the superposition amount (b) of the pixel electrode onto the gate line in the vicinity of right upward corner of the pixel electrode. Thus, since the superposition of the gate storage in the area that the invasion distance of the disclination is large in the vicinity of left upward corner of the pixel is large, the invasion of the disclination onto the pixel area is suppressed.</p> |
