| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor element whereby the break of a metal layer at the edge of an interlayer insulation film pattern is avoided. SOLUTION: A lower insulation film 31 is formed from a BPSC film, PSG having a higher etching rate than that of the film 31 is formed into an interlayer insulation film 33a whereby the etching rate at the front face of this film 33a is made higher than that at the interface with the BPSG film 31 at wet etching. As the result, the edge of the film 33a forms a slant inclined to outside and hence a light shielding layer 36a formed to cover this portion is never broken at the edge.
|
