| 摘要 |
PROBLEM TO BE SOLVED: To obtain a manufacturing method in which it is not required to anticipate the misalignment of a connecting hole with an interconnection by a method wherein a silicon oxide film or an SOG is filled into a recessed part in a self-aligned manner and the interconnection is patterned on an interconnection formation region by using photosensitive resin and the silicon oxide film or the SOG which fills the recessed part. SOLUTION: A recessed part is formed on the surface of an interconnection 18 on a connecting hole 17. The recessed part 22 is filled with an isotropically grown oxide film 23. Then, the silicon oxide film 23 is etched. In this etching treatment, the silicon oxide film 23 other than the recessed part 22 is etched, but the silicon oxide film 23 is left in the recessed part 22 in a self-aligned manner because the film thickness of the silicon oxide film 23 in the part of the recessed part 22 is at about 1.3μm. After that, the interconnection 18 is patterned by an RIE method. In the patterning treatment of the interconnection 18 on the connecting hole 17, the silicon oxide film 23 acts as an etching mask.
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