| 摘要 |
<p>PURPOSE: To prevent the current supply capacity of a booster circuit from lowering by providing a CR circuit for receiving a predetermined voltage generated from the booster circuit and outputting a distorted voltage, and a switching circuit for outputting to a memory cell. CONSTITUTION: The semiconductor integrated circuit comprises a booster circuit 100, and a memory cell 200. A switching circuit 400 is connected between the booster circuit 100 and the memory cell 200 and a CR circuit 300 is connected in parallel with the switching circuit 400. The switching circuit 400 comprises an N-channel depletion MOS transistor (Nch.DTr) 401. Since the Nch.DTr 401 has sufficiently low impedance, current supply capacity of the booster circuit is not lowered even if the resistance of the resistor 301, connected in parallel with therewith is increased.</p> |
