SILICON WAFER AND MANUFACTURE THEREOF

摘要

PURPOSE: To lessen a bulk section in BMD density and to make a device active layer high enough in degree of defect zero so as to make a silicon wafer applicable to a high integrated device. CONSTITUTION: An Si wafer of interstitial oxygen concentration [Oi] 1.4 to 1.8×10<18> atoms/cm<3> is left to stand in an atmosphere of hydrogen gas and/or inert gas at temperatures of 1100 to 1300 deg.C for 1 minute to 48 hours, wherein atmosphere is made to rise in temperature at a rate of 15 to 100 deg.C/min between a room temperature and 900 deg.C and at a rate of 1 to 15 deg.C/min between 900 deg.C and a final temperature. The Si wafer subjected to the above treatment has such properties that a defect zero layer (DZ layer) where oxygen deposits (BMD) above 20nm in size are below 10<3> /cm<3> in density is 10μm thick, and a bulk ranges from 1×10<3> /cm<3> to exp 9.21×10<-13>×[Oi]+3.224}/cm<3> in BMD density.