| 摘要 |
<p>PURPOSE: To make it possible to maintain a highly pure treating atmosphere by forming the whole jig out of single crystal silicon, and utilizing a dislocation formed in the single-crystal silicon to trap impurities, such as heavy metals. CONSTITUTION: A dislocation is formed in a furnace tube 4 made of single- crystal silicon, and impurities, such as heavy metals, are trapped by utilizing the dislocation: A dislocation layer 16 is formed in the inner portion of a furnace tube 4 of single-crystal silicon; the other portions are of dislocation-free crystal 15. As mentioned above, a dislocation layer 16 is formed in part of the surface of a jig for heat treatment so that impurities will be trapped in the dislocation layer 16. This virtually prevents process gas from reacting with the jig itself during heat treatment, which eliminates the possibility of reaction products containing moisture, for example, being produced.</p> |
