| 摘要 |
PURPOSE: To provide a semiconductor device capable of accurately preventing a short-circuit by scattered matter when a fuse is cut off and further of making high integration in the semiconductor device such as SRAM, DRAM or the like which is provided with a redundancy circuit, and which is capable of switching a circuit by cutting of the fuse. CONSTITUTION: Fuses 5a to 5c are arranged in parallel on a straight line. These fuses 5a to 5c are electrically connected to a wiring 3 provided in a lower layer via a contact hole 11. Further, each fuse may be arranged so as not to be superimposed on a melting part of the fuses provided next in a fuse width direction. Further, the fuses are formed to be in an L shape so that one side of each of the fuses is arranged in parallel on a straight line. |
