发明名称 ACCELERATION SENSOR AND MANUFACTURE THEREOF
摘要 PURPOSE: To provide an accelerator sensor having no warpage and possible to be improved in yield and its manufacturing method. CONSTITUTION: Each buffer layer consisting of a silicon nitride film is formed on both main surfaces of a first semiconductor substrate. A second semiconductor substrate 11 is joined to one side of the main surfaces of the fist semiconductor substrate 10. Therefore, the buffer layer 12 comes to be interposed between both these first and second semiconductor substrates 10 and 11 in consequence, and thereby an internal stress at high temperature treatment in time of joining is absorbed by the buffer layer 12, so any possible warpage in the first semiconductor substrate 10 is reduced. With this constitution, the yield in the joining process is well improvable.
申请公布号 JPH0915257(A) 申请公布日期 1997.01.17
申请号 JP19950160807 申请日期 1995.06.27
申请人 MATSUSHITA ELECTRIC WORKS LTD 发明人 YOSHIDA HITOSHI;TOMONARI SHIGEAKI
分类号 G01P15/02;G01P15/12;G01P15/18;H01L29/84 主分类号 G01P15/02
代理机构 代理人
主权项
地址