| 发明名称 |
RESIST, PATTERN FORMING METHOD USING IT, SILICON POLYMER COMPOSITE, AND MANUFACTURE OF INSULATING FILM |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a resist consisting of a polysilane which can precisely form an alkali-developable fine pattern with high sensitivity, and a pattern forming method using this resist. SOLUTION: A resist consisting of a polysilane having a repeat unit represented by a formula is used to form a positive type pattern by alkali development. In the formula, Ar represents a substituted or non-substituted aryl group having 6-24 carbon atoms. |
| 申请公布号 |
JPH0915864(A) |
申请公布日期 |
1997.01.17 |
| 申请号 |
JP19960055029 |
申请日期 |
1996.03.12 |
| 申请人 |
TOSHIBA CORP |
发明人 |
HAYASE SHUJI;MIKOSHIBA SATOSHI;NAKANO YOSHIHIKO;KAWADA RIKAKO;OKINO TAKASHI;FUJIOKA SAWAKO |
| 分类号 |
G03F7/075;C08G77/48;C08G77/60;G03F7/40;H01L21/027;(IPC1-7):G03F7/075 |
主分类号 |
G03F7/075 |
| 代理机构 |
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