| 摘要 |
PURPOSE: To increaseβratio without increasing the size of the memory cell of a semiconductor integrated circuit device which has SRAM. CONSTITUTION: The gate electrodes 7 of drivers MOS.FETQd1 and Qd2 constituting the memory cells MC of SRAM are arranged, so that the directions of their channels may parallel the first direction, on the main surface of a semiconductor substrate, which has the first direction large in the mobility of carriers and the second direction small in mobility of carriers, and the gate electrode 13 of a transfer MOS.FETQt1 is arranged so that the direction of its channel may parallel the second direction.
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