| 摘要 |
PURPOSE:To prevent particles from being produced due to the peeling of a metal film in a pattern part in an alignment pattern for a semiconductor device in which an interconnection by the metal film is formed on a semiconductor substrate. CONSTITUTION:A silicon dioxide film 102 is formed in a caliper-pattern formation region B, and a polycide gate electrode 103 to be used as a substratum caliper pattern is formed. After that, the lower-layer silicon dioxide film is etched off by using an anisotropic dry etching method by making use of the polycide gate electrode 103 to be used as the caliper pattern as a mask, and the caliper pattern is transferred to a lower-layer film. Then, the polycide gate electrode 103 is etched and removed by an anisotropic dry etching method. Thereby, the caliper pattern which is formed of a metal film is transferred to the lower-layer film, and the metal film is removed. As a result, it is possible to prevent particles from being produced from the metal film. |
