发明名称 Magnetron sputtering source for low pressure operation
摘要 A magnetron sputtering source which is capable of very low pressure operation is disclosed. The source comprises a dish-shaped sputter target behind which is mounted a primary magnet for confining a plasma discharge adjacent to the front surface of the sputter target. A bucking magnet, positioned adjacent to the perimeter of the sputter target and, preferably, at the same level as the target, is used to prevent the magnetic field created by the primary magnet from spreading out at near the edge of the sputter target. This enables the source to operate at very low pressure and reduces the impedance of the discharge.
申请公布号 US5593551(A) 申请公布日期 1997.01.14
申请号 US19950396366 申请日期 1995.02.28
申请人 VARIAN ASSOCIATES, INC. 发明人 LAI, KWOK F.
分类号 C23C14/35;H01J37/34;H01L21/203;(IPC1-7):C23C14/34 主分类号 C23C14/35
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