| 摘要 |
An optoelectric device comprises a first n-type epitaxial layer (2), an active layer (3) comprising a second epitaxial layer grown on said first layer and a third epitaxial layer (8) of p-type material in the form of a ridge structure (8') selectively grown on or over the active layer, in which a p-n junction is formed in the active layer between a region of p-type material aligned beneath said ridge, and adjacent n-type regions of the active layer, the underlying first layer (2) being wholly n-type. A method of fabricating such a device involves growing an all n-type planar, forming a dielectric mask (5) thereon, growing by selective epitaxy the ridge structure of p-type material, simultaneously forming the p-n junction by diffusion thereon.
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