| 摘要 |
PURPOSE: To enable the polish of a substrate without producing any cracks by polishing the substrate having a bismuth substitution rare earth family iron garnet single crystal grown thereon while it is again applied adhesively to a polishing plate after a non-magnetic garnet single crystal substrate is polished to a predetermined dimension under the warped condition. CONSTITUTION: While a warped bismuth substitution rare earth family iron garnet single crystal film (BIG) substrate having 200μm or more of thickness of the BIG grown on one surface of a non-magnetic garnet single crystal substrate (hereinafter called substrate A) is polished according to a liquid state epitaxial method to remove the substrate A, when the BIG is regulated to the predetermined thickness, the substrate A is removed by applying the BIG growing substrate to the warped polishing plate and polishing the substrate from the substrate A side. Thus, the substrate A is removed to 30μm or less or the maximum thickness. Next, the substrate A is reapplied adhesively to the polishing plate to again polish the substrate and completely remove the remaining substrate A.
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