发明名称 Open-drain fet output circuit
摘要 An input signal is inverted by an inverter in the first stage and an n-channel MOS transistor on the pull up side in a driver is driven, while an output signal of the inverter in the first stage is inverted by an inverter in the next stage and an n-channel MOS transistor on the pull down side is driven. A driving signal is output from a connection point between the n-channel MOS transistor on the pull up side and the n-channel MOS transistor on the pull down side, and an output transistor is driven by the driving signal. Since a gate voltage of the output transistor increases only by a value of a power supply voltage Vdd minus threshold voltage VT, a rise time and a fall time of a gate potential can be reduced, resulting in improvement in the duty cycle.
申请公布号 US5594369(A) 申请公布日期 1997.01.14
申请号 US19950449146 申请日期 1995.05.24
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 KONDOH, HARUFUSA;ASAHINA, KATSUSHI
分类号 H03K17/687;H03K19/017;H03K19/0175;(IPC1-7):H03K19/017 主分类号 H03K17/687
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