发明名称 |
Open-drain fet output circuit |
摘要 |
An input signal is inverted by an inverter in the first stage and an n-channel MOS transistor on the pull up side in a driver is driven, while an output signal of the inverter in the first stage is inverted by an inverter in the next stage and an n-channel MOS transistor on the pull down side is driven. A driving signal is output from a connection point between the n-channel MOS transistor on the pull up side and the n-channel MOS transistor on the pull down side, and an output transistor is driven by the driving signal. Since a gate voltage of the output transistor increases only by a value of a power supply voltage Vdd minus threshold voltage VT, a rise time and a fall time of a gate potential can be reduced, resulting in improvement in the duty cycle.
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申请公布号 |
US5594369(A) |
申请公布日期 |
1997.01.14 |
申请号 |
US19950449146 |
申请日期 |
1995.05.24 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
KONDOH, HARUFUSA;ASAHINA, KATSUSHI |
分类号 |
H03K17/687;H03K19/017;H03K19/0175;(IPC1-7):H03K19/017 |
主分类号 |
H03K17/687 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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