| 摘要 |
A method of cleaving a semiconductor wafer is disclosed which includes coating a first photoresist on a front surface of a semiconductor wafer having a plurality of semiconductor laser elements formed on the semiconductor wafer, patterning the first photoresist so as to form guide mark patterns for cleaving, coating a second photoresist on a rear surface of the semiconductor wafer, removing an edge part located at the guide mark patterns for cleaving of the second photoresist, etching through the semiconductor wafer to form guide marks using the patterned first and second photoresists as masks, patterning the second photoresist to form stripe patterns in the rear surface, etching the rear surface of the semiconductor wafer so as to form V-shaped or dovetail shaped grooves, removing the first photoresist and the second photoresist, and cleaving the semiconductor wafer along the V-shaped or dovetail shaped grooves into bars, each bar being a semiconductor laser.
|
