MOSFET & METHOD OF MANUFACTURING THE SAME

摘要

The present invention is to provide a method for fabricating MOSFET (metal oxide semiconductor field effect transistor) device using a trench. The method for fabricating MOSFET (metal oxide semiconductor field effect transistor) device using a trench according to the present invention comprises: a) forming a field oxide layer(12) for isolating devices on a P-type substrate(11); b) forming a gate oxide layer(14), a polysilicon layer(15) and a tungsten gate electrode(20) in this order on the trench(13); and c) forming a source(17) and drain(18) between the gate oxide layer(14) and the field oxide layer(12). Thereby the present invention provides the device with high performance and improved characteristic of step coverage due to planar structure.