| 摘要 |
PROBLEM TO BE SOLVED: To reduce the size of a thin film capacitor so that the capacitor can be mounted in a highly integrated state by providing a silicon-resistant diffusion conductive layer on or in a contact hole and, at the same time, separating the conductive layer from a layer having a high dielectric constant. SOLUTION: An insulating layer 2 is formed on the surface of an N low- resistance N-type single-crystal silicon substrate 1 and contact holes CONTs are respectively filled up with N-type polysilicon plugs 3. On the plugs 3, silicon- resistant diffusion conductive layers 4 and oxidation-resistant conductive layers 5 composed of 4 precious metal or conductive oxide are formed as lower electrode layers. In addition, insulating side wall spacers 8 are only provided on the side walls of the conductive layers 4. Under such a condition, a layer 6 having a high dielectric constant is in contact with the upper surface and side faces of the oxidation-resistance conductive layer 5. Moreover, the silicon- resistant conductive layer 4 is separated from the layer 6 and an upper electrode layer 7 is formed on the layer 6 so to cover a lower electrode layer. |
