摘要 |
PURPOSE: To make it possible to relieve design rules and to correct the entire contact hole diameter without making actual measurement by predicting the sizes of actual patterns from the extent of the ruggedness to be worked and applying a correction rate to the sizes of mask patterns, thereby correcting the sizes. CONSTITUTION: The mask patterns M for production of LSIs are formed by using a CAD for layout (step S1) and inspection sheets K are prepared by using a system for managing the production line (step S2). The shapes obtd. by stages, such as etching, deposition, and reflow, are simulated according to these inspection sheets K and the ruggedness of the regions where contact holes are formed is determined (step S3). Further, the contact hole diameters obtd. when the mask hole diameters formed in the step S1 are used are predicted (step S4) in accordance with the surface shapes (ruggedness) determined in the step S3. The mask patterns M are corrected to the mask patterns M' relating to the mask hole diameters in accordance with the results of the prediction (step S5). |