| 摘要 |
PURPOSE: To improve the high frequency characteristics while realizing high current density and high breakdown voltage in a HEMT. CONSTITUTION: In a HEMT having a two stage recess structure, the surface carrier concentration of an AJGa As layer 105 directly under a wide recess adjacent to a gate electrode 107 is set to the same as or more than the carrier concentration of an AlGaAs layer 110 directly under a gate electrode 107, and the product of the depth of the narrow recess 111b embedded with the electrode 107 and the means value of the carrier concentration of the layer 110 directly under the wide recess adjacent to the electrode 107 is set to 1.6×10<11> cm<-2> or more. Thus, the frequency response of a drain current is controlled.
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