| 摘要 |
PURPOSE: To provide a method of manufacturing a porcelain semiconductor large in crystal grain diameter without using a large amount of grain diameter controlling agent and providing a specific process. CONSTITUTION: A semiconductor porcelain is manufactured through a method, wherein calcined powder is so controlled as to be 0.5 to 3μin average grain diameter which is measured through an air permeability method, and a burned body of calcined powder is controlled in crystal grain diameter. By this setup, a semiconductor porcelain of this constitution can be enhanced in crystal grain diameter without using grain diameter controlling agent and providing a specific process, so that a capacitor of this semiconductor porcelain is excellent in electrical properties such as capacitance and enhanced in stability.
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