| 摘要 |
<p>PURPOSE: To provide a TFT array with which the sure repair of a dot defect is possible and a process for producing this array. CONSTITUTION: This TFT array substrate has a dot defect repair pattern 11 which is simultaneously formed of the same material as the material of storage capacitance electrodes 2 and overlaps on adjacent two pixels and an island 12 which is formed on this dot defect repair pattern 11 via a storage capacitance dielectric film 3. The transistor part of the pixel recognized to be the spot defect is cut at a C-C line part by a laser beam and thereafter, the D part on the pixel electrode 5 and the D part on the pixel electrode 5 of the adjacent pixel are irradiated with the laser beam, by which the pixel electrodes of the adjacent pixels are shorted via the dot defect repair pattern 11. Two metallic films via the insulating film, i.e., the dot defect repair pattern 11 and the island 12 are connected by the laser and, therefore, the repair is easily and surely executed.</p> |
