| 摘要 |
PURPOSE: To manufacture small-quantity and multi-type products with a high productivity without increasing the cost. CONSTITUTION: A film forming step, comprising the formation of a transistor and an aluminum film for interconnection layer on a semiconductor substrate is executed (S1); this semiconductor substrate is coated with a resist photosensitive to far ultraviolet rays and electron rays (S2). An interconnection pattern which is common to the maximum extent is transferred to the products of a plurality of types in the same lot by using an aligner which employs a KrF excimer laser as the exposure light source (S3). Electron ray drawing is performed to expose each pattern of the products of a plurality of types by an electron ray drawing device (S4), and the semiconductor substrate is subsequently developed (S5) and etched (S6). |
