| 摘要 |
PURPOSE: To improve flatness while using a thin film, by making a film whose thickness is less than or equal to a specified value an insulating substrate, and forming, on the film, a pattern for reinforcement in the film width direction, so as to stretch wider than or equal to at least a specified percentage of the film width. CONSTITUTION: An insulating substrate is a film whose thickness is at most 40μm, and a wiring pattern composed of a metal layer bonded to a single surface of the film is formed. On the film, a pattern for reinforcement is formed in the film width direction, so as to stretch wider than or equal to at least 80% of the film width. A device hole 6 is divided into two parts, and a pattern 9' for reinforcement is formed on the central insulating film 10. Since the pattern for reinforcement is formed also in the device hole part where an IC is mounted, the flatness of a film carrier is maintained at the time of IC mounting, and its operation can be more facilitated.
|
