| 摘要 |
FIELD: microelectronics. SUBSTANCE: first invention is concerned with integrated circuit each of whose components has one high-conductivity region inscribed with its entire parallelepiped shape into this component or enters it. High-conductivity region inside its respective component of integrated circuit not go onto the surface of semiconductor plate of integrated circuit nor does it go beyond interface of p-n junction regions or entire form of component with purely semiconductor part of integrated circuit plate. High-conductivity region also crosses with its entire form all p-n junctions of its respective component and junction proper crosses both emitter region and high-conductivity region while retaining its working function inside high-conductivity region. High-conductivity region, which is first invention here, has high-conductivity chemical element of almost ideal peripheral lattice structure and doped semiconductor particles. The latter are introduced in high-conductivity region to maintain normal functions of each element function. For easy peripheral passage of current, particles are spaced apart and separately introduced. For shaping first invention, use is made of second one or stencil with very small openings for high-conductivity regions. Second invention is method for gradual uniform heating of stencil to eliminate mold, structure, linear chipping and destruction. EFFECT: reduced resistance and increased speed of response in integrated circuits without increasing degree of integration. |
