发明名称 |
SEMICONDUCTOR MEMORY DEVICE, DATA-WRITING METHOD OF THE DEVICE AND ITS PARALLEL TESTING APPARATUS |
摘要 |
PURPOSE: To conduct an accelerated test at high speeds flexibly without being influenced by a function or an accuracy of a testing apparatus set outside. CONSTITUTION: A test mode control circuit 19 detects from a combination of a control signal from outside and an address signal that a test mode is designated, thereby activating an internal cycle-setting circuit 20. The internal cycle- setting circuit 20 generates a clock signal of a predetermined cycle at an activation time and feeds the signal to a control circuit 18. The control circuit 18 sequentially generates an internal address signal from an internal address generation circuit 10 synchronously with the clock signal in accordance with a test mode designation signal from a test mode-setting circuit 80 and the clock signal from the internal cycle-setting circuit. As a result, a word line of a memory array 7 is selected. |
申请公布号 |
JPH097396(A) |
申请公布日期 |
1997.01.10 |
申请号 |
JP19950155015 |
申请日期 |
1995.06.21 |
申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
OISHI TSUKASA |
分类号 |
G01R31/28;G11C7/00;G11C11/21;G11C11/401;G11C11/404;G11C11/406;G11C11/407;G11C11/408;G11C19/08;G11C29/00;G11C29/06;G11C29/30;G11C29/34;G11C29/46;G11C29/56;H01L21/8242;H01L27/108 |
主分类号 |
G01R31/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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