| 摘要 |
PROBLEM TO BE SOLVED: To microminiaturize a DRAM having a COB(Capacitor Over Bit-line) structure by solving the DOF(Depth Of Focus) problem of the DRAM caused by the level difference between word-line conductor films and cell array sections and peripheral circuit sections of the DRAM and, at the same time, by eliminating the need of alignment margins from storage node contact holes. SOLUTION: A DRAM is constructed in a COW(Capacitor Over Word-line) structure in which the lower electrodes 10 of capacitors are formed above word- line conductor films 14 and, at the same time, storage node contact holes 5a are formed in self-matching ways by utilizing the patterns of bit-line conductor films 6 and word-line conductor films 14 as etching makes. |
