| 摘要 |
PURPOSE: To secure capacitance of a stacked capacitor by etching an electrode forming layer by using a first photomask of a line-like mask pattern, and then, again etching the electrode forming layer by using a mask of an island-like resist pattern formed at intersections of images by performing second exposure and development. CONSTITUTION: An electrode forming layer 12 and a resist layer 13 are formed on a substrate 11 and a first pattern image 23a is formed on a quartz glass substrate 22 by performing first exposure until the decomposition reaction of a positive resist sufficiently takes place by using a first photomask 21 of a line-like mask pattern 23. Similarly, a second pattern image 33a is formed across two or more capacitors so that the images 23a can cross the first pattern image 23a by performing second exposure by using a second photomask 31 and a resist pattern 13a is formed on the electrode forming layer 12 by developing the resist. Therefore, when a stacked capacitor is formed by forming a rectangular island-like storing electrode 12a by preventing the rounding of corner sections by diffraction by etching the layer 12 by using the pattern 13a as a mask, the storing capacity of the capacitor can be secured. |
