| 摘要 |
PURPOSE: To make a contact hole after continuous deposition of a semiconductor layer and a conductor layer by providing the conductor layer on the semiconductor layer except the contact hole. CONSTITUTION: A substrate 3 deposited with a semiconductor layer 9 is placed in a sputter chamber which is then evacuated before introducing a sputter gas, i.e., argon gas. Under a pressure of 1-5mTorr, ZnO doped with aluminum oxide is deposited through RF discharge. A conductor layer 11 is then deposited continuously on the semiconductor layer 9 without performing the cleaning process. Preferably, it is deposited continuously without exposing to the atmosphere after depositing the semiconductor layer 9. Subsequently, the semiconductor layer 9 and the conductor layer 11 are cut off simultaneously by laser scribing thus making a contact hole 7 contiguously to an existing isolation trench 17 in a first electrode layer 5. |
