| 摘要 |
PROBLEM TO BE SOLVED: To avoid increase in the on-resistance by providing a first base region and a second base region and by separating the first base region from the second base region via an insulating layer so that the junction part between these two base regions is formed nearby a gate oxide film. SOLUTION: A second base region 2 is embedded in a first base region 1. A source region 3 is provided in the base region 2. A gate electrode 4 is separated from the base region 1, the base region 2, and the source region 3 by an insulating layer 10. Further, an insulating layer 7 having a Pn- junction part 6 is formed between the base region 1 and the base region 2. The base region 1 and the base region 2 are electrically connected only via a narrow width region 6'. Lowering of charge carrier concentration on the cathode side in the Pn- junction part 6 is eliminated. The insulating layer 7 consists of an oxide film, and an additional electrode consisting of polysilicon is formed in the insulating layer 7. |
