MOS FILED EFFECT TRANSISTOR

摘要

There is provided a MOSFET includng source and drain regions formed in a manner that a second conductivity type impurity is implanted into a first conductivity type substrate, a channel region formed by implanting the first conductivity type impurity, a gate oxide layer and gate sequentially formed on the channel region, in which bird's beak oxide layers are formed on both sides of the gate oxide layer on the channel region, adjacent to the source and drain regions, the channel region has its surface lower than that of the source and drain regions and has a self-aligned doped impurity profile, and the source and drain regions have a sloped impurity doping profile that the impurity concentration slowly decreases as it becomes close to the channel region.