BIPOLAR IC & METHOD OF MANUFACTURING THE SAME

摘要

A fabrication method of high integration bipolar IC is provided to enhance the simplicity of processes by using an epitaxial growing. The fabrication method of bipolar IC includes the steps of: diffusing impurities of phosphorus in a n+ buried layer; removing a silicon oxide layer; forming P- epitaxial layer in a low concentration p-type substrate by epitaxial growing ; and epitaxial growing N- epitaxial layer implanted by boron impurities. The P- epitaxial layer has a thickness of 20 % relative to the thickness of the main N- epitaxial layer. Thereby, it is possible to decrease an auto doping due to out-diffusion of phosphorous impurities.