METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PURPOSE: To reduce a manufacturing period of a semiconductor integrated circuit having a semiconductor device composed of a diffusion step and a wiring step by a method wherein a semiconductor wafer formed with the diffusion step of the semiconductor device is joined to a semiconductor wafer formed with the wiring step of the semiconductor device. CONSTITUTION: There are positioned a mark 30 provided inside a semiconductor chip 29 in a first semiconductor wafer 1 formed with a diffusion step and a mark 32 provided in a semiconductor chip 31 in a second semiconductor wafer 17 formed with a wiring step. In the positioning of the mark, after the second semiconductor wafer 17 is arranged on the first semiconductor wafer 1, the wafer 17 is irradiated with light. After this positioning, the first semiconductor wafer 1 is superposed on the second semiconductor wafer 17. Next, the first semiconductor wafer 1 is joined to the second semiconductor wafer 17 by pressing at a specific temperature under a specific pressure to obtain a semiconductor integrated circuit device.