| 摘要 |
PURPOSE: To prevent the diffusion in different pattern by depositing an anti- diffusion film, i.e., SiO, as a first layer touching a GaAsP layer tightly, and then depositing SiN as a second layer on the SiO before forming a diffusion pattern on the anti-diffusion film. CONSTITUTION: SiO2 3a is-deposited as a first layer touching a GaAsP layer 2b tightly thus enhancing adhesion thereto and preventing the possibility of stripping. SiO2 3a is also excellent in adhesion to SiNx 3b. When Zn is diffused thermally, the SiO2 3a and SiNx 3b function complementally each other to prevent diffusion. When a pinhole is present in the SiO2 3a, for example, the more compact SiNx 3b closes the pinhole thus preventing abnormal diffusion, i.e., diffusion in different pattern. |
