| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a monolithic assembly of a vertical high speed diode and at least one additional vertical component. SOLUTION: A high speed diode is formed on an N type substrate 1 having a continuous N<+> type region 5 formed on one surface and a discontinuous P<+> type region 6 formed on the other surface. The assemble is coated, on the lower surface thereof, with a single metallization C. The other vertical component is a diode, for example.</p> |
