| 摘要 |
PURPOSE: To reduce the cost by employing four layer structure in the epitaxial layer for forming a heterojunction on a substrate thereby enhancing the moisture resistance while sustaining high output emission characteristics and forming the four layers only of two growing solutions. CONSTITUTION: The light emitting diode comprises a p-type Alx2 Ga1-x2 As clad layer 3, a p-type Alx3 Ga1-x3 As active layer 4, an n-type Alx4 Ga1-x4 As window layer 5 formed sequentially on a p-type GaAs substrate 1, wherein a p-type Alx1 Ga1-x1 As intermediary layer 2 is provided between the substrate 1 and the clad layer 3. The AlAs mixed crystal rate of respective layers is set as follows: x2 >=x4 >x1 >=x3 (0<=x1-4 <=1). Thickness of the clad layer 3 is preferably set in the range of 0.05-10μm. The light emitting diode is fabricated by preparing a first growing solution added with p-type dopant and a second undoped growing solution, and then epitaxially growing first, second, third and fourth layers, respectively, using the first growing solution, the second growing solution, the first growing solution, and a second growing solution added with an n-type dopant. |
