发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 <p>PURPOSE: To minimize the current and to decrease the dissipation power by switching the number of sense amplifiers, which are operated by changing the data width by the switching of a reading mode, and performing the reading. CONSTITUTION: When the output data width is set at 8 bits by a data-width control signal BYTE, a switching circuit 50 operates only sense amplifiers 51-58 by the first EN1 signal. At this time, sense amplifiers 59-66 are made to be in the non-operating state, and the dissipation power is decreased. When the outer output is 16 bits, all the sense amplifiers 51-66 are operated. Furthermore, when inner reading operation such as verify is performed by an inner-state signal RUN, all the sense amplifiers 51-66 are operated, and the efficient high- speed operation is performed.</p>
申请公布号 JPH097364(A) 申请公布日期 1997.01.10
申请号 JP19950152024 申请日期 1995.06.19
申请人 SHARP CORP 发明人 TANAKA KATSUHARU
分类号 G11C17/00;G11C7/00;G11C7/10;G11C16/06;(IPC1-7):G11C7/00 主分类号 G11C17/00
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