| 摘要 |
PURPOSE: To easily and surely peel off an unnecessary resist film image regardless of the resist type and conditions by specifying the weight average molecular weight and the acid value of the polymer material to be used for removing the resist film image on a semiconductor substrate. CONSTITUTION: A polymer material to be used for removing a resist film image on the material such as semiconductor substrate contains synthetic high polymer, which is obtained by the condensation polymerization or radical polymerization of monomer, and natural high polymer. The weight average molecular weight of such a polymer material is 6,000 or more, preferably 100,000 or more. Such a polymer material is also required to have an acid value of 100-1,000. Such polymer materials are; a monomer which has a carboxyl group as synthetic high polymer, a monomer which has a sulfonic group as synthetic high polymer, a material obtained by polymerizing or copolymerizing one or more kinds of the monomer, such as hydrochloric acid, and a material obtained by copolymerization with other monomer. |
