| 摘要 |
<p>PROBLEM TO BE SOLVED: To reduce secondary bird's beaks formed by a natural oxide film by forming a pad oxide film on a semiconductor substrate, forming an oxide buffer layer, nitriding its surface to form a nitride film and then forming an anti-oxidation film thereon. SOLUTION: A pad oxide film 12 is formed on a semiconductor substrate 10, an oxide buffer layer 14 is formed thereon, and after its surface is nitrided to form a nitride film 16, an anti-oxidation film 18 is formed thereon. For example, the anti-oxidation film 18 is formed by vapor-depositing silicon nitride, a photoresist pattern is formed thereon, and the nitride film 16 and the anti- oxidation film 18 are selectively corrosion-resistant-etched. Then a field oxide film 20 is formed on an element isolation region wherein the exposed substrate has been selectively oxidized by utilizing a thermal oxidation process. The anti-oxidation film 18, the nitride film 16 and the oxide buffer layer 14 which are formed on an active region are sequentially removed thereafter to complete the element isolation region on the semiconductor substrate 10.</p> |
