| 摘要 |
PURPOSE: To provide a semiconductor device incorporated with a capacitance element free of deterioration in electrical characteristics caused by the deterioration of crystallinity at the end section of a capacitance insulating film. CONSTITUTION: A capacitance element 25 composed of a lower electrode 22, a capacitance insulating film 23, and an upper electrode 24, a protective film 25 which is formed so that the film 26 can cover the element 25, and electrode wiring 28 which is connected to the lower electrode 22 through a first opening 27a and to the upper electrode 24 through a second opening 27b are provided on an insulating film 21a formed on the main surface of a semiconductor substrate 21, so that at least the area of the upper electrode 24 can become smaller than that of the lower electrode 22 and the end section 23 of the capacitance insulating film 23 can be positioned between the end sections of the electrodes 22 and 24. |
