| 摘要 |
PURPOSE: To form a highly integrated and highly reliable DRAM in which the charge storing amount of a capacitor is increased by increasing the surface area of storage electrodes per unit plane area by a simple method. CONSTITUTION: Polycrystalline silicon films 32 and 34 and silicon dioxide films 33 and 35 are alternately piled up upon another in recessed sections 70 formed in an insulating film 31 on a MOS transistor. Then the films are successively subjected to anisotropic etching from the top. In addition, storage electrodes composed of the polycrystalline silicon films 32 and 34 and polysilicon films 36 formed on the entire etched surfaces of the films 32, 34, 33, and 35 by subjecting the films 36 to anisotropic etching. |
