| 摘要 |
PURPOSE: To reduce the defectrate of a semiconductor device caused by short circuits between wires due to dust by repeatedly wiring high-potential side power lines and low-potential side power lines so that a plurality of power lines of the same potential can be continuously wired on both sides of signal lines. CONSTITUTION: VCC power lines 27-1 and 27-2 through which a power supply voltage VCC is supplied to a sense amplifier drive circuit and VSS power lines 36-1 and 36-2 through which another power supply voltage VSS is supplied to the sense amplifier drive circuit are repeatedly wired so that two power lines of the same potential can be continuously wired on both side of each column selecting signal line 18-1 to 18-4. When dusts having a size A which can bridge two wires exists, the column selecting signal lines having possibilities of causing short circuits with the VCC power lines are the three lines of 18-1, 18-2, and 18-3. This number of column selecting signals is less than that of the column selecting signal lines in the prior art example in which the number of column selecting signal lines having the possibilities of causing short circuits is 4. Therefore, the defectrate of the column selecting signal lines caused by short circuits can be reduced. |
