发明名称 HEATING ELEMENT FOR VAPOR GROWING APPARATUS
摘要 <p>PURPOSE: To prevent the generation of particles by suppressing erosion as much as possible by forming at least the specific ratio of the surface of a silicon carbide film of a crystal having a grain size in a specific range. CONSTITUTION: A hollow cylinder 11 extending upward is mounted on the lower surface of a base 10, and a heater support 12 is mounted at the upper end. A heater 16 is mounted at the support 12 via an insulating rod 13, a reflecting plate 14 and an insulating rod 15. A heating element is formed of a carbon base material and a silicon carbide film provided on the surface of the base material, and at least 80% of the silicon carbide film present on the surface is made of crystal having a grain size of 20 to 100μm. Thus, biting along the crystal magnetic field present on the surface can be effectively prevented.</p>
申请公布号 JPH097957(A) 申请公布日期 1997.01.10
申请号 JP19950171611 申请日期 1995.06.15
申请人 TOSHIBA CERAMICS CO LTD;TOSHIBA MACH CO LTD 发明人 SOTODANI EIICHI;ICHIJIMA MASAHIKO;OHASHI TADASHI;SHIMADA MASAYUKI;MITANI SHINICHI;HONDA YASUAKI
分类号 H05B3/00;C23C14/50;H01L21/205;H01L21/68;H01L21/683;(IPC1-7):H01L21/205 主分类号 H05B3/00
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