发明名称 |
HEATING ELEMENT FOR VAPOR GROWING APPARATUS |
摘要 |
<p>PURPOSE: To prevent the generation of particles by suppressing erosion as much as possible by forming at least the specific ratio of the surface of a silicon carbide film of a crystal having a grain size in a specific range. CONSTITUTION: A hollow cylinder 11 extending upward is mounted on the lower surface of a base 10, and a heater support 12 is mounted at the upper end. A heater 16 is mounted at the support 12 via an insulating rod 13, a reflecting plate 14 and an insulating rod 15. A heating element is formed of a carbon base material and a silicon carbide film provided on the surface of the base material, and at least 80% of the silicon carbide film present on the surface is made of crystal having a grain size of 20 to 100μm. Thus, biting along the crystal magnetic field present on the surface can be effectively prevented.</p> |
申请公布号 |
JPH097957(A) |
申请公布日期 |
1997.01.10 |
申请号 |
JP19950171611 |
申请日期 |
1995.06.15 |
申请人 |
TOSHIBA CERAMICS CO LTD;TOSHIBA MACH CO LTD |
发明人 |
SOTODANI EIICHI;ICHIJIMA MASAHIKO;OHASHI TADASHI;SHIMADA MASAYUKI;MITANI SHINICHI;HONDA YASUAKI |
分类号 |
H05B3/00;C23C14/50;H01L21/205;H01L21/68;H01L21/683;(IPC1-7):H01L21/205 |
主分类号 |
H05B3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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