Elektrisch schreib- und löschbare Festwertspeicherzellenanordnung und Verfahren zu deren Herstellung

摘要

In order to produce a read-only storage cell arrangement, strip-shaped grooves are etched in a semiconductor substrate, storage cells each having a vertical MOS transistor with a floating gate (11) being formed on the flanks of these grooves. The source/drain areas of the MOS transistors are produced as strip-shaped doped areas at the base of the grooves (7) and between adjacent grooves (7) in a self-aligning manner using only one mask. The widths of the grooves (7) and the spacings between them are preferably identical such that the storage cell arrangement can be produced with a space requirement of 2F<2> (F: minimum size of the structure).