| 摘要 |
PURPOSE: To take out an electrode from the upper and the lower sides by a method wherein a conductive board is bonded to the surface of the nitride semiconductor layer of a wafer on which the nitride semiconductor layer is grown on an insulated board, and the nitride semiconductor layer is exposed by removing a part of the entire insulated board of the wafer after bonding. CONSTITUTION: A wafer, on which a nitride semiconductor layer 2 is laminated, is prepared on the surface of a supphire board. Then, an ohmic electrode 30 is formed on almost the whole surface of the nitride semiconductor layer 2. On the othr hand, a P-type GaAs board 50, having the size almost same as the sapphire boad 1, is prepared as a conductive board, and the second ohmic electrode 40 is formed on the surface of the above-mentioned board 50. Then, the ohmic electrodes of the nitride semiconductor wafer, having the first ohmic electrode 30, and a board 50, having the second ohmic electrode 40, are laminated with each other and they are pressure-bonded. Besides, the sapphire board is removed, and the nitride semiconductor layer 2 is exposed. |
