| 摘要 |
PURPOSE: To reduce the threshold voltage of a semiconductor laser and to improve the luminous efficiency of a light-emitting diode. CONSTITUTION: An In0.06 Ga0.94 N buffer layer 2, an N-type In0.06 Ga0.94 N clad layer 3t an N-type Ing0.06 Al0.15 Ga0.79 N clad layer 4, an undoped GaN active layer 5 of 50nm in thickness, a P-type In0.06 Al0.15 Ga0.79 N clad layer 6 and a P-type In0.06 Ga0.94 N cap layer 7 are successively grown on an orientation (0001) sapphire board 1, a P-side electrode 8 is formed on a P-type In0.06 Ga0.94 N cap layer 7 and an N-side electrode 9 is formed on the N-type In0.06 Ga0.94 N clad layer 3. In this constitution, the active layer 5 is formed in sufficient thickness, and tensile distortion is added thereon. Also, the light which is polarized to vertical direction of board surface is discharged to board surface in horizontal direction. |
