| 摘要 |
A method for fabricating a fine pattern of a semiconductor device is disclosed. The method for fabricating the fine pattern of the semiconductor device comprises the steps of: a) forming a first insulating layer(2) on a polysilicon layer(1); b) forming a second insulating layer(3) having a large aspect ratio by performing a thermal process at a reactive atmosphere; and c) performing an etching process using the second insulating layer(3) as a mask. Thereby, a capacitance is significantly increased by making a capacitor node as a plurality of protusion shapes.
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